SiO2 thin film deposition on the inner surface of a poly(tetra-fluoroethylene) narrow tube by atmospheric-pressure glow microplasma
SiO2 thin films were deposited on the inner surfaces of a commercial poly(tetrafluoroethylene) narrow tube with an inner diameter of 0.5 mm using tetraethoxysilane/O2 feedstock gases and He carrier gas by atmospheric-pressure microplasma-enhanced chemical vapor deposition. A glow microplasma was gen...
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| Veröffentlicht in: | Thin solid films 2006-12, Vol.515 (4), p.1394-1399 |
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| container_title | Thin solid films |
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| creator | Yoshiki, Hiroyuki Abe, Kazunori Mitsui, Toshiaki |
| description | SiO2 thin films were deposited on the inner surfaces of a commercial poly(tetrafluoroethylene) narrow tube with an inner diameter of 0.5 mm using tetraethoxysilane/O2 feedstock gases and He carrier gas by atmospheric-pressure microplasma-enhanced chemical vapor deposition. A glow microplasma was generated inside the tube by radio frequency (RF) capacitively coupled discharge. X-ray photoelectron spectroscopy spectra showed that the tube inner surface was covered by a SiO2 thin film. Transparent SiO2 thin films were obtained with a deposition rate of 230 nm/min at an RF power of 6 W and substrate temperature of 100 °C. The wettability of the SiO2-coated tube was about 3 times as large as that of an untreated sample tube. |
| doi_str_mv | 10.1016/j.tsf.2006.03.060 |
| format | Article |
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A glow microplasma was generated inside the tube by radio frequency (RF) capacitively coupled discharge. X-ray photoelectron spectroscopy spectra showed that the tube inner surface was covered by a SiO2 thin film. Transparent SiO2 thin films were obtained with a deposition rate of 230 nm/min at an RF power of 6 W and substrate temperature of 100 °C. 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A glow microplasma was generated inside the tube by radio frequency (RF) capacitively coupled discharge. X-ray photoelectron spectroscopy spectra showed that the tube inner surface was covered by a SiO2 thin film. Transparent SiO2 thin films were obtained with a deposition rate of 230 nm/min at an RF power of 6 W and substrate temperature of 100 °C. 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A glow microplasma was generated inside the tube by radio frequency (RF) capacitively coupled discharge. X-ray photoelectron spectroscopy spectra showed that the tube inner surface was covered by a SiO2 thin film. Transparent SiO2 thin films were obtained with a deposition rate of 230 nm/min at an RF power of 6 W and substrate temperature of 100 °C. The wettability of the SiO2-coated tube was about 3 times as large as that of an untreated sample tube.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2006.03.060</doi><tpages>6</tpages></addata></record> |
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| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electric discharges Exact sciences and technology Glow discharge Glow corona Ion and electron beam-assisted deposition ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma processing and deposition Plasma-based ion implantation and deposition Polymers Silicon oxide |
| title | SiO2 thin film deposition on the inner surface of a poly(tetra-fluoroethylene) narrow tube by atmospheric-pressure glow microplasma |
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