Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates

L. Di Gaspare and F. Evangelisti Dipartimento di Fisica, universita degli Studi Roma Tre, Via della vasca Navale 8,00146 Roma Italy We report on the growth and characterization of high-mobility 2DEGs on tensile strained Si grown on cubic SiGe alloy on SOI substrates. The electrical properties were i...

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Hauptverfasser:	Alfaramawi, K, Sweyllam, A, Abulnasr, L, Abboudy, S, El-Wahidy, E F, Di Gaspare, L, Evangelisti, F
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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