Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates

L. Di Gaspare and F. Evangelisti Dipartimento di Fisica, universita degli Studi Roma Tre, Via della vasca Navale 8,00146 Roma Italy We report on the growth and characterization of high-mobility 2DEGs on tensile strained Si grown on cubic SiGe alloy on SOI substrates. The electrical properties were investigated in the 4.2-300 K temperature range as a function of growth conditions and sample structure. Hall mobilities as high as 82000 cm2/V.s at T=4.2 K were obtained in the best 2DEGs on SOI. We found that the main mechanism limiting the mobility at low temperature is the ionized impurity scattering.