High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels

This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide–nitride–oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by...

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Veröffentlicht in:	Thin solid films 2006-11, Vol.515 (3), p.1112-1116
Hauptverfasser:	Chen, Shih-Ching, Chang, Ting-Chang, Liu, Po-Tsun, Wu, Y.C., Tsai, C.C., Chang, T.S., Lien, Chen-Hsin
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Nanoscale materials and structures: fabrication and characterization Nanowire Other topics in nanoscale materials and structures Oxide–nitride–oxide Physics Poly-Si TFTs Quantum wires
Online-Zugang:	Volltext
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