A review of the techniques used for modeling single-event effects in power MOSFETs

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by th...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1996-04, Vol.43 (2), p.546-560
Hauptverfasser:	Johnson, G.H., Palau, J.M., Dachs, C., Galloway, K.F., Schrimpf, R.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models ANALYTICAL SOLUTION CHARGE DISTRIBUTION Dielectric breakdown EVALUATION Failure analysis Feedback FETs INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS MATHEMATICAL MODELS MOSFET MOSFET circuits Neck PHYSICAL RADIATION EFFECTS Power MOSFET Protons Vents
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container_end_page	560
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container_start_page	546
container_title	IEEE Transactions on Nuclear Science
container_volume	43
creator	Johnson, G.H. Palau, J.M. Dachs, C. Galloway, K.F. Schrimpf, R.D.
description	Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches.
doi_str_mv	10.1109/23.490900
format	Article
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subjects	Analytical models ANALYTICAL SOLUTION CHARGE DISTRIBUTION Dielectric breakdown EVALUATION Failure analysis Feedback FETs INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS MATHEMATICAL MODELS MOSFET MOSFET circuits Neck PHYSICAL RADIATION EFFECTS Power MOSFET Protons Vents
title	A review of the techniques used for modeling single-event effects in power MOSFETs
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