Electrical properties of individual and small ensembles of InAs/InP nanostructures
We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C‐AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure....
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Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2006-05, Vol.203 (6), p.1353-1358 |
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Sprache: | eng |
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