Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy

The optical properties of MBE-grown quantum Hall effect devices have been studied by photoreflectance spectroscopy (PR) at different temperatures. The room temperature PR spectra show two typical signals around 1.42 and 1.85eV attributed to the energy band edges of GaAs and AlGaAs, respectively. Bet...

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Veröffentlicht in:	Applied surface science 2004-11, Vol.238 (1-4), p.204-208
Hauptverfasser:	Zamora-Peredo, L., López-López, M., Rivera, Z., Guillén, A., Rodrı́guez-Vázquez, A.G., Ramı́rez-Flores, G., Lastras-Martı́nez, A., Méndez-Garcı́a, V.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology High electron mobility transistor Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Photoreflectance Physics Quantum Hall effect Quantum hall effect (including fractional) Quantum wells Surface quantum wells Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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