Joint density of states of nanostructures: an application to porous silicon

In this work the electronic interband transitions in porous silicon are studied. The calculation is performed using a supercell model with a tight‐binding Hamiltonian, where an atomic‐orbital sp3s* basis set is used. The pores are modelled as empty columns, digged in a crystalline silicon structure,...

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Veröffentlicht in:	Physica status solidi. C 2005-05, Vol.2 (8), p.2966-2969
Hauptverfasser:	Cruz, M., Beltrán, M.R., Wang, C., Tagüeña-Martínez, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	73.20.At 73.22.-f 78.55.Mb 78.67.Bf
Online-Zugang:	Volltext
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