Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry
Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution F...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2001-02, Vol.14 (1), p.20-25 |
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| creator | Jarek, R.L. Thornberg, S.M. |
| description | Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust. |
| doi_str_mv | 10.1109/66.909651 |
| format | Article |
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Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/66.909651</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cations ; Cyclotrons ; Deposition ; Distributed control ; Electronics ; Exact sciences and technology ; Exhaust ; Exhaust systems ; Flammability ; Flammable ; Fourier transforms ; Hazards ; Mass spectrometry ; Microelectronic fabrication (materials and surfaces technology) ; Oxides ; Polysiloxanes ; Resonance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Solids ; Temperature ; Water pollution</subject><ispartof>IEEE transactions on semiconductor manufacturing, 2001-02, Vol.14 (1), p.20-25</ispartof><rights>2001 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust.</description><subject>Applied sciences</subject><subject>Cations</subject><subject>Cyclotrons</subject><subject>Deposition</subject><subject>Distributed control</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Exhaust</subject><subject>Exhaust systems</subject><subject>Flammability</subject><subject>Flammable</subject><subject>Fourier transforms</subject><subject>Hazards</subject><subject>Mass spectrometry</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Oxides</subject><subject>Polysiloxanes</subject><subject>Resonance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Solids</subject><subject>Temperature</subject><subject>Water pollution</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFks1rFTEQwIMo-KwevHoKChUPW_P9cZSHtYVCodTzkpeduCm7b9ckC33iH988tih4sKeBzG9-zEwGobeUnFFK7GelziyxStJnaEOlNA3jQj5HG2KsaJQk-iV6lfMdIVQIqzfo94X75VKX8RRwF30_TGnKcXB7wHDfuyUX3MFcn0rGIU0jLj3gPv7omwLjDMmVJQGe7mMHeE6Th5yxy7WmQBrjHjq8O-Dz2-Zye4NHV5N5Bl-qCEo6vEYvghsyvHmMJ-j7-dfb7UVzdf3tcvvlqvHCstK4oJhkTBnQREoZgnesMyAD8WzXOW4MGMt22mkH0gfJjQYrbQhCa-d3lp-gj6u3dvhzgVzaMWYPw3HMacmtpUIJYbiq5Ol_SWY5qX72NGh43bAxT4NSEaO0ruD7f8C7aUn7upfWWq6kkkJW6NMK-fpNOUFo5xRHlw4tJe3xAFql2vUAKvvhUeiyd0NIbu9j_lNgKbf2OPG7lYoA8De5Kh4AsjO4mA</recordid><startdate>20010201</startdate><enddate>20010201</enddate><creator>Jarek, R.L.</creator><creator>Thornberg, S.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Solids</topic><topic>Temperature</topic><topic>Water pollution</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jarek, R.L.</creatorcontrib><creatorcontrib>Thornberg, S.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jarek, R.L.</au><au>Thornberg, S.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2001-02-01</date><risdate>2001</risdate><volume>14</volume><issue>1</issue><spage>20</spage><epage>25</epage><pages>20-25</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/66.909651</doi><tpages>6</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Cations Cyclotrons Deposition Distributed control Electronics Exact sciences and technology Exhaust Exhaust systems Flammability Flammable Fourier transforms Hazards Mass spectrometry Microelectronic fabrication (materials and surfaces technology) Oxides Polysiloxanes Resonance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Solids Temperature Water pollution |
| title | Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry |
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