Harmonic enhancement of Gunn oscillations in GaN

High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sevik, C, Yilmaz, D E, Bulutay, C
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 232
container_issue
container_start_page 231
container_title
container_volume 772
creator Sevik, C
Yilmaz, D E
Bulutay, C
description High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.
doi_str_mv 10.1063/1.1994078
format Conference Proceeding
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_29298450</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29298450</sourcerecordid><originalsourceid>FETCH-LOGICAL-p221t-107602e389a2520ecde814fe81318e56566a829d1b0c8da7366107771bfd82ce3</originalsourceid><addsrcrecordid>eNotjr1OwzAURi0BEm1h4A08saVcX_-PqIIUqYKlldgq17kRQYld6uT9iQTLd6Zz9DH2IGAtwMgnsRbeK7Duii3BSq0AtVXXbAHgVYVKft6yZSnfAOitdQsG23AZcuoip_QVUqSB0shzy-spJZ5L7Po-jF1OhXeJ1-H9jt20oS90_88VO7y-7DfbavdRv22ed9UZUYyVAGsASTofUCNQbMgJ1c4jhSNttDHBoW_ECaJrgpXGzIq14tQ2DiPJFXv8654v-WeiMh6HrkSa3yTKUzmiR--UBvkLxwVEmg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>29298450</pqid></control><display><type>conference_proceeding</type><title>Harmonic enhancement of Gunn oscillations in GaN</title><source>AIP Journals Complete</source><creator>Sevik, C ; Yilmaz, D E ; Bulutay, C</creator><creatorcontrib>Sevik, C ; Yilmaz, D E ; Bulutay, C</creatorcontrib><description>High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 0735402574</identifier><identifier>ISBN: 9780735402577</identifier><identifier>DOI: 10.1063/1.1994078</identifier><language>eng</language><ispartof>Physics of Semiconductors; Part A, 2005, Vol.772, p.231-232</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sevik, C</creatorcontrib><creatorcontrib>Yilmaz, D E</creatorcontrib><creatorcontrib>Bulutay, C</creatorcontrib><title>Harmonic enhancement of Gunn oscillations in GaN</title><title>Physics of Semiconductors; Part A</title><description>High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.</description><issn>0094-243X</issn><isbn>0735402574</isbn><isbn>9780735402577</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjr1OwzAURi0BEm1h4A08saVcX_-PqIIUqYKlldgq17kRQYld6uT9iQTLd6Zz9DH2IGAtwMgnsRbeK7Duii3BSq0AtVXXbAHgVYVKft6yZSnfAOitdQsG23AZcuoip_QVUqSB0shzy-spJZ5L7Po-jF1OhXeJ1-H9jt20oS90_88VO7y-7DfbavdRv22ed9UZUYyVAGsASTofUCNQbMgJ1c4jhSNttDHBoW_ECaJrgpXGzIq14tQ2DiPJFXv8654v-WeiMh6HrkSa3yTKUzmiR--UBvkLxwVEmg</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Sevik, C</creator><creator>Yilmaz, D E</creator><creator>Bulutay, C</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050101</creationdate><title>Harmonic enhancement of Gunn oscillations in GaN</title><author>Sevik, C ; Yilmaz, D E ; Bulutay, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p221t-107602e389a2520ecde814fe81318e56566a829d1b0c8da7366107771bfd82ce3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sevik, C</creatorcontrib><creatorcontrib>Yilmaz, D E</creatorcontrib><creatorcontrib>Bulutay, C</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sevik, C</au><au>Yilmaz, D E</au><au>Bulutay, C</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Harmonic enhancement of Gunn oscillations in GaN</atitle><btitle>Physics of Semiconductors; Part A</btitle><date>2005-01-01</date><risdate>2005</risdate><volume>772</volume><spage>231</spage><epage>232</epage><pages>231-232</pages><issn>0094-243X</issn><isbn>0735402574</isbn><isbn>9780735402577</isbn><abstract>High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.</abstract><doi>10.1063/1.1994078</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0094-243X
ispartof Physics of Semiconductors; Part A, 2005, Vol.772, p.231-232
issn 0094-243X
language eng
recordid cdi_proquest_miscellaneous_29298450
source AIP Journals Complete
title Harmonic enhancement of Gunn oscillations in GaN
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T15%3A03%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Harmonic%20enhancement%20of%20Gunn%20oscillations%20in%20GaN&rft.btitle=Physics%20of%20Semiconductors;%20Part%20A&rft.au=Sevik,%20C&rft.date=2005-01-01&rft.volume=772&rft.spage=231&rft.epage=232&rft.pages=231-232&rft.issn=0094-243X&rft.isbn=0735402574&rft.isbn_list=9780735402577&rft_id=info:doi/10.1063/1.1994078&rft_dat=%3Cproquest%3E29298450%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29298450&rft_id=info:pmid/&rfr_iscdi=true