Growth of AlN by vectored flow epitaxy

The growth of AlN using ammonia and trimethylaluminium is reported using a novel technique, vectored flow epitaxy. The reactor is designed to pre-crack the ammonia, run at atmospheric pressure and keep the precursors spatially separated to avoid the gas-phase interaction that can lead to an involati...

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Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.328-331
Hauptverfasser:	Clayton, A.J., Khandekar, A.A., Kuech, T.F., Mason, N.J., Robinson, M.F., Watkins, S., Guo, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Single-crystal and powder diffraction Specific materials Structure of solids and liquids crystallography Theory and models of film growth X-ray diffraction and scattering
Online-Zugang:	Volltext
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