Germanium Nanoparticle Formation into Thin SiO2 Films by Negative Ion Implantation and Their Electric Characteristics

Germanium nanoparticles in a thin SiO2 film on Si have been formed by negative ion implantation for the development of very low power consumption electron devices using nanoparticles. Their electrical properties of 25-nm-SiO2/Si films including Ge nanoparticles were investigated with CV method after...

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Hauptverfasser:	Arai, Nobutoshi, Tsuji, Hiroshi, Gotoh, Naoyuki, Okumine, Tetsuya, Yanagitani, Toshio, Harada, Masatomi, Satoh, Takeshi, Ohnishi, Hitoshi, Minotani, Takashi, Adachi, Kouichirou, Kotaki, Hiroshi, Ishibashi, Toyotsugu, Gotoh, Yasuhito, Ishikawa, Junzo
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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