Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS2 Phototransistors

Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown mono...

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Veröffentlicht in:	ACS applied materials & interfaces 2024-02, Vol.16 (8), p.10316-10324
Hauptverfasser:	Meng, Guodong, She, Junyi, Yu, Hao, Li, Qiang, Liu, Xin, Yin, Zongyou, Cheng, Yonghong
Format:	Artikel
Sprache:	eng
Schlagworte:	electric current energy use and consumption Functional Inorganic Materials and Devices nanosheets
Online-Zugang:	Volltext
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