GaN nanowires: CVD synthesis and properties

The growth of GaN nanowires from Ga and NH 3 sources in the flow of Ar carrier gas using a chemical vapor deposition (CVD) system was systematically studied. The substrates used were Si(111) and Si(100). Fabricated nanowires were characterized by scanning electron microscopy (SEM), transmission elec...

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Veröffentlicht in:	Thin solid films 2006-11, Vol.515 (3), p.984-989
Hauptverfasser:	Cai, X.M., Djurišić, A.B., Xie, M.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Catalysis Catalysts: preparations and properties Chemistry Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium nitride General and physical chemistry Materials science Nanoscale materials and structures: fabrication and characterization Nanostructures Other semiconductors Other topics in nanoscale materials and structures Physics Quantum wires Specific materials Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry
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