High performance resist for EUV lithography

As the semiconductor industry moves to the 32 nm node, it becomes apparent that new lithography technology will be needed. One possibility for fabricating this feature size is extreme ultraviolet (EUV) technology. With the advent of EUV, new high performance resist materials will need to be develope...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2005, Vol.77 (1), p.27-35
Hauptverfasser:	Gonsalves, K.E., Thiyagarajan, M., Choi, J.H., Zimmerman, Paul, Cerrina, F., Nealey, P., Golovkina, V., Wallace, J., Batina, Nikola
Format:	Artikel
Sprache:	eng
Schlagworte:	Adamantyl methacrylate Applied sciences Electronics EUV Exact sciences and technology Hydroxystyrene Lithography Microelectronic fabrication (materials and surfaces technology) Resist Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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