(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to furth...

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Veröffentlicht in:	Journal of crystal growth 2004-01, Vol.260 (3), p.451-455
Hauptverfasser:	Song, Shu-Lin, Chen, Nuo-Fu, Zhou, Jian-Ping, Li, Yan-Li, Chai, Chun-Lin, Yang, Shao-Yan, Liu, Zhi-Kai
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Auger electron spectroscopy A1. X-ray diffraction A3. Ion-beam epitaxy B1. Gadolinium compounds Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics
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