Ge effects on silicidation

Nickel and cobalt silicides have formation and/or stability issues when forming in the presence of Ge. Additions of Ge increase the temperature at which a low resistance CoSi 2 is formed due to phase separation into CoSi 2 and Ge-rich Si–Ge grains. With Ni, additions of Ge decrease the temperature a...

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Veröffentlicht in:	Microelectronic engineering 2005-12, Vol.82 (3), p.467-473
Hauptverfasser:	Besser, Paul R., King, Paul, Paton, Eric, Robie, Stephen
Format:	Artikel
Sprache:	eng
Schlagworte:	Agglomeration Applied sciences Cobalt silicide Electronics Exact sciences and technology Materials Nickel silicide Si-Ge Silicide
Online-Zugang:	Volltext
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