Magnetoimpedance effect in electrochemically etched CoFeSiB amorphous wires

As-received CoFeSiB amorphous wires with 128 μm diameter were electrochemically etched at constant voltage to obtain micro magnetoimpedance (MI) sensor. Wires with different diameters from 13 to 100 μm were obtained at various constant voltage and pH conditions. The diameters and surface properties...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2005-07, Vol.364 (1), p.294-299
Hauptverfasser: Atalay, F.E., Atalay, S., Kaya, H., Bahadir, A.R.
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description As-received CoFeSiB amorphous wires with 128 μm diameter were electrochemically etched at constant voltage to obtain micro magnetoimpedance (MI) sensor. Wires with different diameters from 13 to 100 μm were obtained at various constant voltage and pH conditions. The diameters and surface properties of the wires were studied by scanning electron microscopy. It was found that the magnitude of the magnetoimpedance effect was first increased and then decreased with decreasing wire diameter. The thinnest wire obtained at pH 4 and 0.4 V, has a diameter of 13 μm and this wire shows a 4.95% variation in the magnitude of ( Δ Z / Z )(%). The results were discussed on the basis of internal stress distribution and a simple magnetic moment rotational model.
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subjects Amorphous wires
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
General theory and models of magnetic ordering
Magnetic properties and materials
Magnetoimpedance effect
Physics
title Magnetoimpedance effect in electrochemically etched CoFeSiB amorphous wires
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