Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy
This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at...
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| Veröffentlicht in: | Physica Status Solidi (b) 2004-10, Vol.241 (12), p.2802-2805 |
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| container_title | Physica Status Solidi (b) |
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| creator | Kim, Hwa-Mok Lee, Hosang Kim, Suk Il Ryu, Sung Ryong Kang, Tae Won Chung, Kwan Soo |
| description | This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x ≥ 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm (x = 0.04, 3.26 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssb.200405043 |
| format | Article |
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The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x ≥ 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm (x = 0.04, 3.26 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200405043</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>78.67.Lt ; 81.07.Vb ; 81.16.Be ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Physics</subject><ispartof>Physica Status Solidi (b), 2004-10, Vol.241 (12), p.2802-2805</ispartof><rights>Copyright © 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4543-1aeb86d94c8c2a4ba7594fb3e73c9c5d2c9c87958a65f861d2328e3209d696793</citedby><cites>FETCH-LOGICAL-c4543-1aeb86d94c8c2a4ba7594fb3e73c9c5d2c9c87958a65f861d2328e3209d696793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.200405043$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.200405043$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,1411,23909,23910,25118,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16192238$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Hwa-Mok</creatorcontrib><creatorcontrib>Lee, Hosang</creatorcontrib><creatorcontrib>Kim, Suk Il</creatorcontrib><creatorcontrib>Ryu, Sung Ryong</creatorcontrib><creatorcontrib>Kang, Tae Won</creatorcontrib><creatorcontrib>Chung, Kwan Soo</creatorcontrib><title>Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy</title><title>Physica Status Solidi (b)</title><addtitle>phys. stat. sol. (b)</addtitle><description>This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x ≥ 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm (x = 0.04, 3.26 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>78.67.Lt</subject><subject>81.07.Vb</subject><subject>81.16.Be</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Physics</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkD1v2zAQhoUiBeq4WTtzSTa5_BBFcqyd1HVgpEWSIiNxoiiYqSQqpFxb_z4yHLjdstwtz_Me7k2SLwTPCMb0axdjMaMYZ5jjjH1IJoRTkjLFyVkywUzglChBPyXnMT5jjAVhZJL8_u5DA73zLfIVWrVLuEMttD74MqKd6zfItaXbNqjxtUVVAHNgIyoGtBnK4EqL_kLnA-o2EC2ynethP3xOPlZQR3vxtqfjnZvHxY90_XO5WnxbpybjGUsJ2ELmpcqMNBSyAgRXWVUwK5hRhpd0nFIoLiHnlcxJSRmVllGsylzlQrFpcnXM7YJ_2drY68ZFY-saWuu3UVNFBaVSjODsCJrgYwy20l1wDYRBE6wP7elDe_rU3ihcviVDNFCPj7fGxX9WThSlTI6cOnI7V9vhnVT96-Fh_v-N9Oi62Nv9yYXwR-eCCa6f7pZ6_rS4zm7lvX5kr_HAkDE</recordid><startdate>200410</startdate><enddate>200410</enddate><creator>Kim, Hwa-Mok</creator><creator>Lee, Hosang</creator><creator>Kim, Suk Il</creator><creator>Ryu, Sung Ryong</creator><creator>Kang, Tae Won</creator><creator>Chung, Kwan Soo</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200410</creationdate><title>Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy</title><author>Kim, Hwa-Mok ; Lee, Hosang ; Kim, Suk Il ; Ryu, Sung Ryong ; Kang, Tae Won ; Chung, Kwan Soo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4543-1aeb86d94c8c2a4ba7594fb3e73c9c5d2c9c87958a65f861d2328e3209d696793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>78.67.Lt</topic><topic>81.07.Vb</topic><topic>81.16.Be</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hwa-Mok</creatorcontrib><creatorcontrib>Lee, Hosang</creatorcontrib><creatorcontrib>Kim, Suk Il</creatorcontrib><creatorcontrib>Ryu, Sung Ryong</creatorcontrib><creatorcontrib>Kang, Tae Won</creatorcontrib><creatorcontrib>Chung, Kwan Soo</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hwa-Mok</au><au>Lee, Hosang</au><au>Kim, Suk Il</au><au>Ryu, Sung Ryong</au><au>Kang, Tae Won</au><au>Chung, Kwan Soo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>phys. stat. sol. (b)</addtitle><date>2004-10</date><risdate>2004</risdate><volume>241</volume><issue>12</issue><spage>2802</spage><epage>2805</epage><pages>2802-2805</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x ≥ 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm (x = 0.04, 3.26 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.200405043</doi><tpages>4</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 78.67.Lt 81.07.Vb 81.16.Be Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics |
| title | Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy |
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