GaN/AlGaN superlattices for optoelectronics in the mid-infrared

In this work we discuss the optical properties of a GaN/Al0.11Ga0.89N multiple‐quantum‐well structure grown on 4H‐SiC by plasma‐assisted molecular‐beam epitaxy. Photoluminescence lines related to the fundamental and excited electronic levels are identified, in good agreement with simulations of the...

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Veröffentlicht in:	Physica Status Solidi (b) 2006-06, Vol.243 (7), p.1669-1673
Hauptverfasser:	Guillot, F., Monroy, E., Gayral, B., Bellet-Amalric, E., Jalabert, D., Gérard, J.-M., Dang, Le Si, Tchernycheva, M., Julien, F. H., Monnoye, S., Mank, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	68.65.Fg 73.21.Fg 78.55.Cr 78.67.De 81.07.St 81.15.Hi Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells
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