Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in...

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Veröffentlicht in:	Applied surface science 2007-04, Vol.253 (12), p.5516-5520
Hauptverfasser:	Liu, W.L., Chen, W.J., Tsai, T.K., Hsieh, S.H., Liu, C.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capping layer Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Copper metallization Diffusion barrier Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Silicon substrate Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Tin-doped indium oxide
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