Mechanical stress in ALD-Al2O3 films

Mechanical stress in atomic-layer deposition (ALD)-Al2O3 films was investigated at room temperature and during thermal cycling up to 870 deg C. The films were generally under tensile stress. Thicker films (25-60 nm) showed a sharp stress increase at about 780-790 deg C. X-ray diffraction (XRD)-, X-ray reflectance (XRR)- and X-ray photoelectron spectroscopy (XPS)measurements indicate an irreversible phase transition from amorphous AlO(OH) to a mixture of different crystalline Al2O3-phases. Annealing at higher temperatures leads to a stress reduction as a result of diffusion and recovery processes. The stress behaviour of thinner films ( < 20 nm) during thermal cycling is quite different. Tensile stress increases with increasing temperature and decreases to nearly the same value during cooling down. The process is continuous and reversible.