Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices
We report on the preparation and structural characterization of piezoelectric films of aluminium nitride onto diamond substrates. The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from...
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| Veröffentlicht in: | Thin solid films 2006-02, Vol.497 (1-2), p.304-308 |
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| container_title | Thin solid films |
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| creator | Benetti, M. Cannatà, D. Di Pietrantonio, F. Verona, E. Generosi, A. Paci, B. Rossi Albertini, V. |
| description | We report on the preparation and structural characterization of piezoelectric films of aluminium nitride onto diamond substrates. The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from stechiometric targets. The structural characterization of the films was performed by energy dispersive X-ray diffraction analysis. The deposition temperature was found to play a relevant role to obtain highly textured films with the c-axis perpendicular to the substrate surface, as required by surface-acoustic-wave applications. In particular, a minimum substrate temperature of 300 °C was needed in order to obtain any internal order along the c-axis while, increasing the temperature, the AlN orientation becomes preferential. The rocking curve analysis revealed a good crystalline quality of the AlN films whose degree of epitaxy can be well described by a linearly increasing function of the temperature at which the films are grown. |
| doi_str_mv | 10.1016/j.tsf.2005.10.073 |
| format | Article |
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The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from stechiometric targets. The structural characterization of the films was performed by energy dispersive X-ray diffraction analysis. The deposition temperature was found to play a relevant role to obtain highly textured films with the c-axis perpendicular to the substrate surface, as required by surface-acoustic-wave applications. In particular, a minimum substrate temperature of 300 °C was needed in order to obtain any internal order along the c-axis while, increasing the temperature, the AlN orientation becomes preferential. The rocking curve analysis revealed a good crystalline quality of the AlN films whose degree of epitaxy can be well described by a linearly increasing function of the temperature at which the films are grown.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.10.073</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics ; Aluminium nitride ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Diamond ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Elements, oxides, nitrides, borides, carbides, chalcogenides, etc ; Exact sciences and technology ; Physics ; Piezoelectricity and electromechanical effects ; Sputtering</subject><ispartof>Thin solid films, 2006-02, Vol.497 (1-2), p.304-308</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-d25d1f76ede65f3bb144737fde4f3f8edcc49569eae985abd3247b596c65da63</citedby><cites>FETCH-LOGICAL-c389t-d25d1f76ede65f3bb144737fde4f3f8edcc49569eae985abd3247b596c65da63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2005.10.073$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17477498$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Benetti, M.</creatorcontrib><creatorcontrib>Cannatà, D.</creatorcontrib><creatorcontrib>Di Pietrantonio, F.</creatorcontrib><creatorcontrib>Verona, E.</creatorcontrib><creatorcontrib>Generosi, A.</creatorcontrib><creatorcontrib>Paci, B.</creatorcontrib><creatorcontrib>Rossi Albertini, V.</creatorcontrib><title>Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices</title><title>Thin solid films</title><description>We report on the preparation and structural characterization of piezoelectric films of aluminium nitride onto diamond substrates. The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from stechiometric targets. The structural characterization of the films was performed by energy dispersive X-ray diffraction analysis. The deposition temperature was found to play a relevant role to obtain highly textured films with the c-axis perpendicular to the substrate surface, as required by surface-acoustic-wave applications. In particular, a minimum substrate temperature of 300 °C was needed in order to obtain any internal order along the c-axis while, increasing the temperature, the AlN orientation becomes preferential. The rocking curve analysis revealed a good crystalline quality of the AlN films whose degree of epitaxy can be well described by a linearly increasing function of the temperature at which the films are grown.</description><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</subject><subject>Aluminium nitride</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diamond</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Elements, oxides, nitrides, borides, carbides, chalcogenides, etc</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Piezoelectricity and electromechanical effects</subject><subject>Sputtering</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkE1vEzEQhi0EEiHwA7j5ArdN7fXXWpyqCgpSBZferVl7rDhs1sHepKK_vo5SiRs9jWb0vDOjh5CPnG044_pqt1lq3PSMqdZvmBGvyIoPxna9Efw1WTEmWaeZZW_Ju1p3jDHe92JFft-W_LBsKcyB-i0U8AuW9AhLyjPNkR4SPmac0C8leXo9_aTLNs00pmlfacyFhgT7PIduhIqB1mOJ4JGCz8e6tMQDnJAGPCWP9T15E2Gq-OG5rsn9t6_3N9-7u1-3P26u7zovBrt0oVeBR6MxoFZRjCOX0ggTA8oo4oDBe2mVtghoBwVjEL00o7LaaxVAizX5fFl7KPnPEevi9ql6nCaYsX3letsrq6R4GRy05qyRa8IvoC-51oLRHUraQ_nrOHNn_W7nmn531n8eNf0t8-l5OVQPUyww-1T_BY00RtqhcV8uHDYjp4TFVZ9w9hhSadZdyOk_V54AY9mcsg</recordid><startdate>20060221</startdate><enddate>20060221</enddate><creator>Benetti, M.</creator><creator>Cannatà, D.</creator><creator>Di Pietrantonio, F.</creator><creator>Verona, E.</creator><creator>Generosi, A.</creator><creator>Paci, B.</creator><creator>Rossi Albertini, V.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QF</scope></search><sort><creationdate>20060221</creationdate><title>Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices</title><author>Benetti, M. ; Cannatà, D. ; Di Pietrantonio, F. ; Verona, E. ; Generosi, A. ; Paci, B. ; Rossi Albertini, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-d25d1f76ede65f3bb144737fde4f3f8edcc49569eae985abd3247b596c65da63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</topic><topic>Aluminium nitride</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diamond</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Elements, oxides, nitrides, borides, carbides, chalcogenides, etc</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Piezoelectricity and electromechanical effects</topic><topic>Sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Benetti, M.</creatorcontrib><creatorcontrib>Cannatà, D.</creatorcontrib><creatorcontrib>Di Pietrantonio, F.</creatorcontrib><creatorcontrib>Verona, E.</creatorcontrib><creatorcontrib>Generosi, A.</creatorcontrib><creatorcontrib>Paci, B.</creatorcontrib><creatorcontrib>Rossi Albertini, V.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benetti, M.</au><au>Cannatà, D.</au><au>Di Pietrantonio, F.</au><au>Verona, E.</au><au>Generosi, A.</au><au>Paci, B.</au><au>Rossi Albertini, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices</atitle><jtitle>Thin solid films</jtitle><date>2006-02-21</date><risdate>2006</risdate><volume>497</volume><issue>1-2</issue><spage>304</spage><epage>308</epage><pages>304-308</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We report on the preparation and structural characterization of piezoelectric films of aluminium nitride onto diamond substrates. The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from stechiometric targets. The structural characterization of the films was performed by energy dispersive X-ray diffraction analysis. The deposition temperature was found to play a relevant role to obtain highly textured films with the c-axis perpendicular to the substrate surface, as required by surface-acoustic-wave applications. In particular, a minimum substrate temperature of 300 °C was needed in order to obtain any internal order along the c-axis while, increasing the temperature, the AlN orientation becomes preferential. The rocking curve analysis revealed a good crystalline quality of the AlN films whose degree of epitaxy can be well described by a linearly increasing function of the temperature at which the films are grown.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.10.073</doi><tpages>5</tpages></addata></record> |
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| subjects | Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics Aluminium nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Diamond Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Elements, oxides, nitrides, borides, carbides, chalcogenides, etc Exact sciences and technology Physics Piezoelectricity and electromechanical effects Sputtering |
| title | Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices |
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