Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films
Transparent conducting ZnO:Al and ZnO films of 380–800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5–6 at.% Al or a pure Zn cathode in oxygen background gas with pressure P = 0.4–0.93 Pa. The crystalline structur...
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| Veröffentlicht in: | Thin solid films 2006-11, Vol.515 (3), p.885-890 |
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| creator | Zhitomirsky, V.N. Çetinörgü, E. Adler, E. Rosenberg, Yu Boxman, R.L. Goldsmith, S. |
| description | Transparent conducting ZnO:Al and ZnO films of 380–800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5–6 at.% Al or a pure Zn cathode in oxygen background gas with pressure
P
=
0.4–0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of
P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.
The Al concentration in the film was found to be 0.006–0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity,
ρ, and its stability. The resistivity of as-deposited ZnO:Al films,
ρ
=
(6–8)
×
10
−
3
Ω cm, was independent of
P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The
ρ of ZnO films 60 days after deposition increased by a factor of ∼
7 with respect to as-deposited films. The ZnO:Al films deposited with
P
=
0.47–0.6 Pa were more stable, their
ρ first slowly increased during the storage time (1.1–1.4 times with respect to as-deposited films), and then stabilized after 30–45 days. |
| doi_str_mv | 10.1016/j.tsf.2006.07.150 |
| format | Article |
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P
=
0.4–0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of
P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.
The Al concentration in the film was found to be 0.006–0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity,
ρ, and its stability. The resistivity of as-deposited ZnO:Al films,
ρ
=
(6–8)
×
10
−
3
Ω cm, was independent of
P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The
ρ of ZnO films 60 days after deposition increased by a factor of ∼
7 with respect to as-deposited films. The ZnO:Al films deposited with
P
=
0.47–0.6 Pa were more stable, their
ρ first slowly increased during the storage time (1.1–1.4 times with respect to as-deposited films), and then stabilized after 30–45 days.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2006.07.150</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystalline structure ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Filtered vacuum arc deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Resistivity ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; Vacuum deposition ; ZnO ; ZnO:Al</subject><ispartof>Thin solid films, 2006-11, Vol.515 (3), p.885-890</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-68c599dcd002f35b173296d3b34891ee7113244798a5250f254a6a457bf2f14c3</citedby><cites>FETCH-LOGICAL-c389t-68c599dcd002f35b173296d3b34891ee7113244798a5250f254a6a457bf2f14c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609006008522$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18460941$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhitomirsky, V.N.</creatorcontrib><creatorcontrib>Çetinörgü, E.</creatorcontrib><creatorcontrib>Adler, E.</creatorcontrib><creatorcontrib>Rosenberg, Yu</creatorcontrib><creatorcontrib>Boxman, R.L.</creatorcontrib><creatorcontrib>Goldsmith, S.</creatorcontrib><title>Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films</title><title>Thin solid films</title><description>Transparent conducting ZnO:Al and ZnO films of 380–800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5–6 at.% Al or a pure Zn cathode in oxygen background gas with pressure
P
=
0.4–0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of
P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.
The Al concentration in the film was found to be 0.006–0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity,
ρ, and its stability. The resistivity of as-deposited ZnO:Al films,
ρ
=
(6–8)
×
10
−
3
Ω cm, was independent of
P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The
ρ of ZnO films 60 days after deposition increased by a factor of ∼
7 with respect to as-deposited films. The ZnO:Al films deposited with
P
=
0.47–0.6 Pa were more stable, their
ρ first slowly increased during the storage time (1.1–1.4 times with respect to as-deposited films), and then stabilized after 30–45 days.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystalline structure</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Filtered vacuum arc deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Resistivity</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>Vacuum deposition</subject><subject>ZnO</subject><subject>ZnO:Al</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkEtrGzEURkVIIU7aH5DdbNLdTK4eI43oypi6LTF40266EbIeQWY8mkiaQP99ZBzornR1N-d8Fw5C9xg6DJg_HruSfUcAeAeiwz1coRUehGyJoPgarQAYtBwk3KDbnI8AgAmhK_S0DWNxydnmVZtlOTU6mca6OeZQQpya6JuS9JRnndxUGhMnu5gSpudmPbY2zlX8Pe0bH8ZT_og-eD1m9-n93qFf268_N9_b3f7bj8161xo6yNLywfRSWmMBiKf9AQtKJLf0QNkgsXMCY0oYE3LQPenBk55prlkvDp54zAy9Q58vu3OKL4vLRZ1CNm4c9eTikhWRpOfA2f-AVFDGK4gvoEkx5-S8mlM46fRHYVDnvuqoal917qtAqNq3Og_v4zobPfpayYT8VxxYzc1w5b5cOFeTvAaXVDbBTcbZkJwpysbwjy9vrPuOsQ</recordid><startdate>20061123</startdate><enddate>20061123</enddate><creator>Zhitomirsky, V.N.</creator><creator>Çetinörgü, E.</creator><creator>Adler, E.</creator><creator>Rosenberg, Yu</creator><creator>Boxman, R.L.</creator><creator>Goldsmith, S.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>20061123</creationdate><title>Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films</title><author>Zhitomirsky, V.N. ; Çetinörgü, E. ; Adler, E. ; Rosenberg, Yu ; Boxman, R.L. ; Goldsmith, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-68c599dcd002f35b173296d3b34891ee7113244798a5250f254a6a457bf2f14c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystalline structure</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Filtered vacuum arc deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Resistivity</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>Vacuum deposition</topic><topic>ZnO</topic><topic>ZnO:Al</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhitomirsky, V.N.</creatorcontrib><creatorcontrib>Çetinörgü, E.</creatorcontrib><creatorcontrib>Adler, E.</creatorcontrib><creatorcontrib>Rosenberg, Yu</creatorcontrib><creatorcontrib>Boxman, R.L.</creatorcontrib><creatorcontrib>Goldsmith, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhitomirsky, V.N.</au><au>Çetinörgü, E.</au><au>Adler, E.</au><au>Rosenberg, Yu</au><au>Boxman, R.L.</au><au>Goldsmith, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films</atitle><jtitle>Thin solid films</jtitle><date>2006-11-23</date><risdate>2006</risdate><volume>515</volume><issue>3</issue><spage>885</spage><epage>890</epage><pages>885-890</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Transparent conducting ZnO:Al and ZnO films of 380–800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5–6 at.% Al or a pure Zn cathode in oxygen background gas with pressure
P
=
0.4–0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of
P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.
The Al concentration in the film was found to be 0.006–0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity,
ρ, and its stability. The resistivity of as-deposited ZnO:Al films,
ρ
=
(6–8)
×
10
−
3
Ω cm, was independent of
P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The
ρ of ZnO films 60 days after deposition increased by a factor of ∼
7 with respect to as-deposited films. The ZnO:Al films deposited with
P
=
0.47–0.6 Pa were more stable, their
ρ first slowly increased during the storage time (1.1–1.4 times with respect to as-deposited films), and then stabilized after 30–45 days.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2006.07.150</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystalline structure Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Filtered vacuum arc deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Resistivity Structure of solids and liquids crystallography Structure of specific crystalline solids Vacuum deposition ZnO ZnO:Al |
| title | Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films |
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