Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2, SiH 4 and C 3H 8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 °C) with various C/Si ratio and deposition time. It was found that under condi...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.66-72 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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| creator | Soueidan, M. Ferro, G. Nsouli, B. Cauwet, F. Dazord, J. Younes, G. Monteil, Y. |
| description | Epitaxial 3C-SiC(1
1
1) films were grown on 6H-SiC(0
0
0
1) Si face on axis substrates by chemical vapor deposition under H
2, SiH
4 and C
3H
8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700
°C) with various C/Si ratio and deposition time. It was found that under conditions giving high lateral growth (low C/Si and/or high temperature), homoepitaxial growth occurred even at temperatures as low as 1450
°C. For other conditions, the 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction. Single domain enlargement was observed when growth was performed at 1700
°C over a nucleation layer grown at 1450
°C. |
| doi_str_mv | 10.1016/j.mseb.2006.02.052 |
| format | Article |
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1
1) films were grown on 6H-SiC(0
0
0
1) Si face on axis substrates by chemical vapor deposition under H
2, SiH
4 and C
3H
8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700
°C) with various C/Si ratio and deposition time. It was found that under conditions giving high lateral growth (low C/Si and/or high temperature), homoepitaxial growth occurred even at temperatures as low as 1450
°C. For other conditions, the 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction. Single domain enlargement was observed when growth was performed at 1700
°C over a nucleation layer grown at 1450
°C.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2006.02.052</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Chemical vapor deposition (CVD) ; Epitaxy ; Nucleation ; Silicon carbide ; Surface morphology</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.66-72</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c397t-4c0fa27e5ce84adf7e196ea83ff24672851d07a8925c2e26009ee8b2d4aececd3</citedby><cites>FETCH-LOGICAL-c397t-4c0fa27e5ce84adf7e196ea83ff24672851d07a8925c2e26009ee8b2d4aececd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2006.02.052$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Soueidan, M.</creatorcontrib><creatorcontrib>Ferro, G.</creatorcontrib><creatorcontrib>Nsouli, B.</creatorcontrib><creatorcontrib>Cauwet, F.</creatorcontrib><creatorcontrib>Dazord, J.</creatorcontrib><creatorcontrib>Younes, G.</creatorcontrib><creatorcontrib>Monteil, Y.</creatorcontrib><title>Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>Epitaxial 3C-SiC(1
1
1) films were grown on 6H-SiC(0
0
0
1) Si face on axis substrates by chemical vapor deposition under H
2, SiH
4 and C
3H
8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700
°C) with various C/Si ratio and deposition time. It was found that under conditions giving high lateral growth (low C/Si and/or high temperature), homoepitaxial growth occurred even at temperatures as low as 1450
°C. For other conditions, the 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction. Single domain enlargement was observed when growth was performed at 1700
°C over a nucleation layer grown at 1450
°C.</description><subject>Chemical vapor deposition (CVD)</subject><subject>Epitaxy</subject><subject>Nucleation</subject><subject>Silicon carbide</subject><subject>Surface morphology</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PAzEMhiMEEqXwB5gysd3h-L4lFlQBRarEAMxRmnNoSq85khTov-eOMjPZlt_Hkh_GLgWkAkR5vU67QMsUAcoUMIUCj9hE1FWW5E2eH7MJNCiSQkB1ys5CWAOAQMQJe78zhnTkzvA3777iivfKq44i-cDdlscV8dU4OeptVN_7MZnNkmc7G9fl_LcLu2WIXkXiyz3XK-qsVhv-qXrneUu9CzZatz1nJ0ZtAl381Sl7vb97mc2TxdPD4-x2keisqWKSazAKKyo01blqTUWiKUnVmTGYlxXWhWihUnWDhUbCEqAhqpfY5oo06TabsqvD3d67jx2FKDsbNG02aktuFyQOpKhrHIJ4CGrvQvBkZO9tp_xeCpCjV7mWo1c5epWAcvA6QDcHiIYXPi15GbSlrabW-sGkbJ39D_8B81SCZA</recordid><startdate>20060601</startdate><enddate>20060601</enddate><creator>Soueidan, M.</creator><creator>Ferro, G.</creator><creator>Nsouli, B.</creator><creator>Cauwet, F.</creator><creator>Dazord, J.</creator><creator>Younes, G.</creator><creator>Monteil, Y.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20060601</creationdate><title>Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition</title><author>Soueidan, M. ; Ferro, G. ; Nsouli, B. ; Cauwet, F. ; Dazord, J. ; Younes, G. ; Monteil, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c397t-4c0fa27e5ce84adf7e196ea83ff24672851d07a8925c2e26009ee8b2d4aececd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Chemical vapor deposition (CVD)</topic><topic>Epitaxy</topic><topic>Nucleation</topic><topic>Silicon carbide</topic><topic>Surface morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Soueidan, M.</creatorcontrib><creatorcontrib>Ferro, G.</creatorcontrib><creatorcontrib>Nsouli, B.</creatorcontrib><creatorcontrib>Cauwet, F.</creatorcontrib><creatorcontrib>Dazord, J.</creatorcontrib><creatorcontrib>Younes, G.</creatorcontrib><creatorcontrib>Monteil, Y.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Soueidan, M.</au><au>Ferro, G.</au><au>Nsouli, B.</au><au>Cauwet, F.</au><au>Dazord, J.</au><au>Younes, G.</au><au>Monteil, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2006-06-01</date><risdate>2006</risdate><volume>130</volume><issue>1</issue><spage>66</spage><epage>72</epage><pages>66-72</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>Epitaxial 3C-SiC(1
1
1) films were grown on 6H-SiC(0
0
0
1) Si face on axis substrates by chemical vapor deposition under H
2, SiH
4 and C
3H
8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700
°C) with various C/Si ratio and deposition time. It was found that under conditions giving high lateral growth (low C/Si and/or high temperature), homoepitaxial growth occurred even at temperatures as low as 1450
°C. For other conditions, the 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction. Single domain enlargement was observed when growth was performed at 1700
°C over a nucleation layer grown at 1450
°C.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2006.02.052</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.66-72 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29251882 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Chemical vapor deposition (CVD) Epitaxy Nucleation Silicon carbide Surface morphology |
| title | Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition |
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