Fluid flow and transport processes in a large area atmospheric pressure stagnation flow CVD reactor for deposition of thin films

This paper investigates a new CVD reactor geometry to deposit uniform films on large area substrates at atmospheric pressure. Calculations have been performed for a wide range of parameters to investigate the effects of inlet flow rates, substrate rotation, and height of the reactor chamber. It is s...

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Veröffentlicht in:	International journal of heat and mass transfer 2004-11, Vol.47 (23), p.4979-4994
Hauptverfasser:	Luo, G., Vanka, S.P., Glumac, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemical vapor deposition processes Computer simulation Cross-disciplinary physics: materials science rheology Exact sciences and technology Fluid flows Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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