Fabrication of high-performance 407nm violet light-emitting diode

High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the curren...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of crystal growth 2004-09, Vol.270 (1-2), p.57-61
Hauptverfasser:	Wang, H.X., Jiang, N., Hiraki, H., Nishimura, K., Sasaoka, H., Hiraki, A., Sakai, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A3. Metalorganic chemical vapor deposition B1. Gan B3. Light emitting diodes
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!