Fabrication of high-performance 407nm violet light-emitting diode

Fabrication of high-performance 407nm violet light-emitting diode

High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the curren...

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Veröffentlicht in:Journal of crystal growth 2004-09, Vol.270 (1-2), p.57-61
Hauptverfasser: Wang, H.X., Jiang, N., Hiraki, H., Nishimura, K., Sasaoka, H., Hiraki, A., Sakai, S.
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Sprache:eng
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A1. Characterization
A3. Metalorganic chemical vapor deposition
B1. Gan
B3. Light emitting diodes
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container_end_page 61
container_issue 1-2
container_start_page 57
container_title Journal of crystal growth
container_volume 270
creator Wang, H.X.
Jiang, N.
Hiraki, H.
Nishimura, K.
Sasaoka, H.
Hiraki, A.
Sakai, S.
description High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the current spreading layer in three LEDs. Using a 30nm high-temperature un-doped GaN layer, the output efficiency and high injection current luminance versus current (I–L) characteristics of our LED have been greatly improved. A LED with an output power of 7mW at an injection current of 20mA was achieved. In additional, the LED also shows an almost linear I–L characteristics at high injection current.
doi_str_mv 10.1016/j.jcrysgro.2004.06.016
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subjects A1. Characterization
A3. Metalorganic chemical vapor deposition
B1. Gan
B3. Light emitting diodes
title Fabrication of high-performance 407nm violet light-emitting diode
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