Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

In order to obtain p-type ZnO thin films, effect of atomic ratio of Zn:N:Al on the electronic and structural characteristic of ZnO thin films was investigated. Hall measurement indicated that with the increase of Al doping, conductive type of as-grown ZnO thin films changed from n-type to p-type and...

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Veröffentlicht in:	Applied surface science 2007-02, Vol.253 (8), p.3825-3827
Hauptverfasser:	Xiaodan, Zhang, Hongbing, Fan, Ying, Zhao, Jian, Sun, Changchun, Wei, Cunshan, Zhang
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology N–Al co-doping p-Type conduction Physics Ultrasonic spray pyrolysis ZnO
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