Adhesion studies of diamond-like carbon films deposited on Ti6Al4V substrate with a silicon interlayer
Diamond-like carbon (DLC) films have proven quite advantageous in many tribological applications due to their low friction coefficient, their extreme hardness, and more recently their high adherence on different substrate materials. However, for many applications, DLC films as thick as 2 μm are requ...
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Veröffentlicht in: | Thin solid films 2006-09, Vol.515 (1), p.375-379 |
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creator | Bonetti, L.F. Capote, G. Santos, L.V. Corat, E.J. Trava-Airoldi, V.J. |
description | Diamond-like carbon (DLC) films have proven quite advantageous in many tribological applications due to their low friction coefficient, their extreme hardness, and more recently their high adherence on different substrate materials. However, for many applications, DLC films as thick as 2 μm are required, which cause high residual stress. In order to overcome this problem, this study observed the behavior of different thicknesses of silicon interlayer between DLC films and Ti6Al4V substrates. The study also analyzed the relation of growth parameters to the mechanical properties of DLC films. Silicon and DLC films were grown by using a rf-PECVD at 13.56 MHz with silane and methane atmospheres, respectively. The contribution of an interlayer thickness to the adhesion between the DLC films and Ti6Al4V substrate was evaluated by using a micro-scratch technique. The hardness and friction coefficient were evaluated by using microindentation and lateral force microscopy (LFM), respectively. Raman scattering spectroscopy was used to characterize the film quality. A correlation was found between the intrinsic stress and adhesion of DLC film and the parameters of the silicon interlayer growth. The addition of a silicon interlayer successfully reduced intrinsic stress of the films, even as measured by using a perfilometry technique. |
doi_str_mv | 10.1016/j.tsf.2005.12.154 |
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However, for many applications, DLC films as thick as 2 μm are required, which cause high residual stress. In order to overcome this problem, this study observed the behavior of different thicknesses of silicon interlayer between DLC films and Ti6Al4V substrates. The study also analyzed the relation of growth parameters to the mechanical properties of DLC films. Silicon and DLC films were grown by using a rf-PECVD at 13.56 MHz with silane and methane atmospheres, respectively. The contribution of an interlayer thickness to the adhesion between the DLC films and Ti6Al4V substrate was evaluated by using a micro-scratch technique. The hardness and friction coefficient were evaluated by using microindentation and lateral force microscopy (LFM), respectively. Raman scattering spectroscopy was used to characterize the film quality. A correlation was found between the intrinsic stress and adhesion of DLC film and the parameters of the silicon interlayer growth. 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However, for many applications, DLC films as thick as 2 μm are required, which cause high residual stress. In order to overcome this problem, this study observed the behavior of different thicknesses of silicon interlayer between DLC films and Ti6Al4V substrates. The study also analyzed the relation of growth parameters to the mechanical properties of DLC films. Silicon and DLC films were grown by using a rf-PECVD at 13.56 MHz with silane and methane atmospheres, respectively. The contribution of an interlayer thickness to the adhesion between the DLC films and Ti6Al4V substrate was evaluated by using a micro-scratch technique. The hardness and friction coefficient were evaluated by using microindentation and lateral force microscopy (LFM), respectively. Raman scattering spectroscopy was used to characterize the film quality. A correlation was found between the intrinsic stress and adhesion of DLC film and the parameters of the silicon interlayer growth. The addition of a silicon interlayer successfully reduced intrinsic stress of the films, even as measured by using a perfilometry technique.</description><subject>Adhesion</subject><subject>Anelasticity, internal friction, stress relaxation, and mechanical resonances</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diamond-like carbon (DLC)</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical and acoustical properties; adhesion</subject><subject>Mechanical properties of solids</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>PECVD</subject><subject>Physics</subject><subject>Silicon interlayer</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surfaces and interfaces; 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However, for many applications, DLC films as thick as 2 μm are required, which cause high residual stress. In order to overcome this problem, this study observed the behavior of different thicknesses of silicon interlayer between DLC films and Ti6Al4V substrates. The study also analyzed the relation of growth parameters to the mechanical properties of DLC films. Silicon and DLC films were grown by using a rf-PECVD at 13.56 MHz with silane and methane atmospheres, respectively. The contribution of an interlayer thickness to the adhesion between the DLC films and Ti6Al4V substrate was evaluated by using a micro-scratch technique. The hardness and friction coefficient were evaluated by using microindentation and lateral force microscopy (LFM), respectively. Raman scattering spectroscopy was used to characterize the film quality. A correlation was found between the intrinsic stress and adhesion of DLC film and the parameters of the silicon interlayer growth. The addition of a silicon interlayer successfully reduced intrinsic stress of the films, even as measured by using a perfilometry technique.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.12.154</doi><tpages>5</tpages></addata></record> |
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subjects | Adhesion Anelasticity, internal friction, stress relaxation, and mechanical resonances Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diamond-like carbon (DLC) Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Mechanical and acoustical properties adhesion Mechanical properties of solids Methods of deposition of films and coatings film growth and epitaxy PECVD Physics Silicon interlayer Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Tribology and hardness |
title | Adhesion studies of diamond-like carbon films deposited on Ti6Al4V substrate with a silicon interlayer |
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