Advantages of HfAlON gate dielectric film for advanced low power CMOS application

There are a number of challenges against an actual employment of high-k films in the production, but ultra-thin SiON films cannot survive for low power application anymore. On the other hand, any new materials introduced into ULSI fabrication processes are required to be used for a couple of device...

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Veröffentlicht in:	Microelectronic engineering 2005-06, Vol.80, p.190-197
Hauptverfasser:	Toriumi, A., Iwamoto, K., Ota, H., Kadoshima, M., Mizubayashi, W., Nabatame, T., Ogawa, A., Tominaga, K., Horikawa, T., Satake, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Fermi-level pinning HfAlOx High-k Integrated circuits layer-by-layer deposition and annealing Materials mobility Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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