Characterization of a large area scanning PECVD deposition system with small size RF electrodes
We have conducted characterization of a scanning plasma enhanced chemical vapor deposition (PECVD) system for producing controlled non-uniform deposition or etching profiles. Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very c...
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| Veröffentlicht in: | Thin solid films 2006-09, Vol.515 (1), p.307-312 |
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| creator | Yin, Y. Hang, L. Proschek, M. McKenzie, D.R. Bilek, M.M.M. Allan, S. Han, J. Rubanov, S. Lauder, R.D.T. Godfrey, R.B. |
| description | We have conducted characterization of a scanning plasma enhanced chemical vapor deposition (PECVD) system for producing controlled non-uniform deposition or etching profiles. Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very close to the chamber wall but electron temperature and ion density were not affected significantly. It was found that a very thin but long tail of parasitic deposition was present over the entire large substrate. To eliminate the parasitic deposition an aperture (plasma guarding house) was constructed and was found to eliminate the parasitic plasma deposition. Deposited silicon nitride and silicon oxide thin films using the plasma guarding house in the scanning PECVD system showed very good optical properties similar to those obtained in conventional deposition methods. No multilayer structure was observed in TEM analysis on these films. |
| doi_str_mv | 10.1016/j.tsf.2005.12.082 |
| format | Article |
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Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very close to the chamber wall but electron temperature and ion density were not affected significantly. It was found that a very thin but long tail of parasitic deposition was present over the entire large substrate. To eliminate the parasitic deposition an aperture (plasma guarding house) was constructed and was found to eliminate the parasitic plasma deposition. Deposited silicon nitride and silicon oxide thin films using the plasma guarding house in the scanning PECVD system showed very good optical properties similar to those obtained in conventional deposition methods. No multilayer structure was observed in TEM analysis on these films.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.12.082</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Large area plasma deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; Plasma enhanced chemical vapor deposition (PECVD) ; Scanning plasma deposition</subject><ispartof>Thin solid films, 2006-09, Vol.515 (1), p.307-312</ispartof><rights>2005 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c420t-9789996863e7ea7b03032d08be4378ecf03f75792beec94e8fd5251273c541fe3</citedby><cites>FETCH-LOGICAL-c420t-9789996863e7ea7b03032d08be4378ecf03f75792beec94e8fd5251273c541fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2005.12.082$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18154942$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yin, Y.</creatorcontrib><creatorcontrib>Hang, L.</creatorcontrib><creatorcontrib>Proschek, M.</creatorcontrib><creatorcontrib>McKenzie, D.R.</creatorcontrib><creatorcontrib>Bilek, M.M.M.</creatorcontrib><creatorcontrib>Allan, S.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Rubanov, S.</creatorcontrib><creatorcontrib>Lauder, R.D.T.</creatorcontrib><creatorcontrib>Godfrey, R.B.</creatorcontrib><title>Characterization of a large area scanning PECVD deposition system with small size RF electrodes</title><title>Thin solid films</title><description>We have conducted characterization of a scanning plasma enhanced chemical vapor deposition (PECVD) system for producing controlled non-uniform deposition or etching profiles. Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very close to the chamber wall but electron temperature and ion density were not affected significantly. It was found that a very thin but long tail of parasitic deposition was present over the entire large substrate. To eliminate the parasitic deposition an aperture (plasma guarding house) was constructed and was found to eliminate the parasitic plasma deposition. Deposited silicon nitride and silicon oxide thin films using the plasma guarding house in the scanning PECVD system showed very good optical properties similar to those obtained in conventional deposition methods. No multilayer structure was observed in TEM analysis on these films.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Large area plasma deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>Plasma enhanced chemical vapor deposition (PECVD)</subject><subject>Scanning plasma deposition</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkU1PGzEQhq2qSE2hP6A3X-C227H3w7Y4oRCgUqRWCHq1HO-YONrspp4NKPx6Nk2k3kpPc3nmHc37MPZVQC5A1N9W-UAhlwBVLmQOWn5gE6GVyaQqxEc2ASghq8HAJ_aZaAUAQspiwux06ZLzA6b46obYd7wP3PHWpSfkLqHj5F3Xxe6J_5xNf13zBjc9xT8k7WjANX-Jw5LT2rUtp_iK_P6GY4t-SH2DdMZOgmsJvxznKXu8mT1M77L5j9vv06t55ksJQ2aUNsbUui5QoVMLKKCQDegFloXS6AMUQVXKyAWiNyXq0FSyEuNzvipFwOKUXRxyN6n_vUUa7DqSx7Z1HfZbstJIYZSp_wMUsqpq9T6olQahYATFAfSpJ0oY7CbFtUs7K8Du5diVHeXYvRwrpB3ljDvnx3A39tuG5Dof6e-iFlVpyj13eeBw7O45YrLkI3Yem5jGim3Tx39ceQNGoqOk</recordid><startdate>20060925</startdate><enddate>20060925</enddate><creator>Yin, Y.</creator><creator>Hang, L.</creator><creator>Proschek, M.</creator><creator>McKenzie, D.R.</creator><creator>Bilek, M.M.M.</creator><creator>Allan, S.</creator><creator>Han, J.</creator><creator>Rubanov, S.</creator><creator>Lauder, R.D.T.</creator><creator>Godfrey, R.B.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7TB</scope><scope>FR3</scope><scope>7SR</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20060925</creationdate><title>Characterization of a large area scanning PECVD deposition system with small size RF electrodes</title><author>Yin, Y. ; Hang, L. ; Proschek, M. ; McKenzie, D.R. ; Bilek, M.M.M. ; Allan, S. ; Han, J. ; Rubanov, S. ; Lauder, R.D.T. ; Godfrey, R.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-9789996863e7ea7b03032d08be4378ecf03f75792beec94e8fd5251273c541fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Large area plasma deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>Plasma enhanced chemical vapor deposition (PECVD)</topic><topic>Scanning plasma deposition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yin, Y.</creatorcontrib><creatorcontrib>Hang, L.</creatorcontrib><creatorcontrib>Proschek, M.</creatorcontrib><creatorcontrib>McKenzie, D.R.</creatorcontrib><creatorcontrib>Bilek, M.M.M.</creatorcontrib><creatorcontrib>Allan, S.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Rubanov, S.</creatorcontrib><creatorcontrib>Lauder, R.D.T.</creatorcontrib><creatorcontrib>Godfrey, R.B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yin, Y.</au><au>Hang, L.</au><au>Proschek, M.</au><au>McKenzie, D.R.</au><au>Bilek, M.M.M.</au><au>Allan, S.</au><au>Han, J.</au><au>Rubanov, S.</au><au>Lauder, R.D.T.</au><au>Godfrey, R.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of a large area scanning PECVD deposition system with small size RF electrodes</atitle><jtitle>Thin solid films</jtitle><date>2006-09-25</date><risdate>2006</risdate><volume>515</volume><issue>1</issue><spage>307</spage><epage>312</epage><pages>307-312</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We have conducted characterization of a scanning plasma enhanced chemical vapor deposition (PECVD) system for producing controlled non-uniform deposition or etching profiles. Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very close to the chamber wall but electron temperature and ion density were not affected significantly. It was found that a very thin but long tail of parasitic deposition was present over the entire large substrate. To eliminate the parasitic deposition an aperture (plasma guarding house) was constructed and was found to eliminate the parasitic plasma deposition. Deposited silicon nitride and silicon oxide thin films using the plasma guarding house in the scanning PECVD system showed very good optical properties similar to those obtained in conventional deposition methods. No multilayer structure was observed in TEM analysis on these films.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.12.082</doi><tpages>6</tpages></addata></record> |
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| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Large area plasma deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Plasma enhanced chemical vapor deposition (PECVD) Scanning plasma deposition |
| title | Characterization of a large area scanning PECVD deposition system with small size RF electrodes |
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