350.9 nm UV laser diode grown on sapphire substrate
The combination of a low‐temperature‐deposited AlN interlayer technology and lateral seeding epitaxy (Hetero‐ELO) yielded crack‐free and low‐dislocation‐density AlGaN. The AlGaN over the grooves has a dislocation density as low as 2 × 107 cm–2 due to the lateral growth effect, in contrast with a hig...
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| Veröffentlicht in: | Physica status solidi. C 2005-01, Vol.2 (7), p.2828-2831 |
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| container_title | Physica status solidi. C |
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| creator | Iwaya, M. Iida, K. Kawashima, T. Miyazaki, A. Kasugai, H. Mishima, S. Honshio, A. Miyake, Y. Kamiyama, S. Amano, H. Akasaki, I. |
| description | The combination of a low‐temperature‐deposited AlN interlayer technology and lateral seeding epitaxy (Hetero‐ELO) yielded crack‐free and low‐dislocation‐density AlGaN. The AlGaN over the grooves has a dislocation density as low as 2 × 107 cm–2 due to the lateral growth effect, in contrast with a high dislocation density of 5 × 109cm–2 over terrace region. We demonstrated a UV‐laser diode grown on this low‐dislocation‐density AlGaN. The ridge stripes of the UV‐LD were aligned on this low‐threading‐dislocation‐region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200461399 |
| format | Article |
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KGaA, Weinheim)</description><subject>42.55.Px</subject><subject>68.55.Ln</subject><subject>78.55.Cr</subject><subject>78.66.Fd</subject><subject>78.67.De</subject><subject>85.60.Jb</subject><issn>1610-1634</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAURi0EEqWwMntiS7DjR-IRFWiRKqjUUkbr2nEgkCbBTlX672kVVLF1-u5wzh0OQteUxJSQ5LYNwcYJIVxSptQJGlBJSUQlT04PN-Pn6CKET0KYIFQOENttrHC9wq9LXEFwHudlkzv87ptNjZsaB2jbj9I7HNYmdB46d4nOCqiCu_rbIVo8PixGk2j6Mn4a3U0jyzhXkVUuk8ZSoYTKKaQ2Bcizwjow0mSmAMOKPMtJDoUQoATlLGVKGkIoMQBsiG76t61vvtcudHpVBuuqCmrXrINOVEJTKpLjYMZTwRnbgXEPWt-E4F2hW1-uwG81JXrfUO8b6kPDnaB6YVNWbnuE1rP5fPTfjXq3DJ37Objgv7RMWSr02_NYi-V4lqh7pRn7Bfv9g_0</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Iwaya, M.</creator><creator>Iida, K.</creator><creator>Kawashima, T.</creator><creator>Miyazaki, A.</creator><creator>Kasugai, H.</creator><creator>Mishima, S.</creator><creator>Honshio, A.</creator><creator>Miyake, Y.</creator><creator>Kamiyama, S.</creator><creator>Amano, H.</creator><creator>Akasaki, I.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QF</scope><scope>JG9</scope></search><sort><creationdate>20050101</creationdate><title>350.9 nm UV laser diode grown on sapphire substrate</title><author>Iwaya, M. ; Iida, K. ; Kawashima, T. ; Miyazaki, A. ; Kasugai, H. ; Mishima, S. ; Honshio, A. ; Miyake, Y. ; Kamiyama, S. ; Amano, H. ; Akasaki, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3449-c9e86bc15959d1a7c7aad8fceab6b8bfab3fd8d0daf55a951437396b0010baa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>42.55.Px</topic><topic>68.55.Ln</topic><topic>78.55.Cr</topic><topic>78.66.Fd</topic><topic>78.67.De</topic><topic>85.60.Jb</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iwaya, M.</creatorcontrib><creatorcontrib>Iida, K.</creatorcontrib><creatorcontrib>Kawashima, T.</creatorcontrib><creatorcontrib>Miyazaki, A.</creatorcontrib><creatorcontrib>Kasugai, H.</creatorcontrib><creatorcontrib>Mishima, S.</creatorcontrib><creatorcontrib>Honshio, A.</creatorcontrib><creatorcontrib>Miyake, Y.</creatorcontrib><creatorcontrib>Kamiyama, S.</creatorcontrib><creatorcontrib>Amano, H.</creatorcontrib><creatorcontrib>Akasaki, I.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. 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| subjects | 42.55.Px 68.55.Ln 78.55.Cr 78.66.Fd 78.67.De 85.60.Jb |
| title | 350.9 nm UV laser diode grown on sapphire substrate |
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