Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

SiOxNy thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) using hexamethyldisilazane (HMDS, 99*9%)/NH3/O2/Ar at a low temperature, and examined for use as a water vapor diffusion barrier. The film characteristics were investigated as a function of...

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Veröffentlicht in:Thin solid films 2006-11, Vol.515 (3), p.917-921
Hauptverfasser: LEE, J. H, JEONG, C. H, KIM, H. B, LIM, J. T, KYUNG, S. J, YEOM, G. Y
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Sprache:eng
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Zusammenfassung:SiOxNy thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) using hexamethyldisilazane (HMDS, 99*9%)/NH3/O2/Ar at a low temperature, and examined for use as a water vapor diffusion barrier. The film characteristics were investigated as a function of the O2:NH3 ratio. An increase in the O2:NH3 ratio decreased the level of impurities such as -CHx, N-H in the film through a reaction with oxygen. Thereby, a more transparent and harder film was obtained. In addition, an increase in the O2:NH3 ratio decreased the nitrogen content in the film resulting in a more SiO2-like SiOxNy film. Using SiOxNy fabricated with an O2:NH3 ratio of 1:1, a multilayer thin film consisting of multiple layers of SiOxNy/parylene layers was formed on a polyethersulfone (PES, 200 mum) substrate, and its water vapor transmittance rate (WVTR) was investigated. A WVTR < 0*005 g/(m(2)day) applicable to organic thin film transistors or organic light emitting diodes was obtained using a multilayer composed of SiOxNy (260 nm)/parylene ( < 1*2 mum) on the PES.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.07.056