Etching of hexagonal SiC surfaces in chlorine-containing gas media at ambient pressure

The modification of the silicon carbide (4H-SiC) single-crystal surface in a chlorine-containing gas mixture at high temperature (800–1000 °C) and ambient pressure was investigated. The results of silicon carbide chlorination are found to strongly depend on the hexagonal surface orientation. Due to...

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Veröffentlicht in:	Surface science 2006-06, Vol.600 (11), p.2242-2251
Hauptverfasser:	Zinovev, A.V., Moore, J.F., Hryn, J., Pellin, M.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Chlorine Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology LEED Physics Raman spectroscopy SEM Silicon carbide Single-crystal surface X-ray photoelectron spectroscopy
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