Growth optimization and crossover of transport mechanisms in Bi2Se3thin films

We report the growth, structural characterization, and transport studies of Bi2Se3thin film on single crystalline silicon (Si), Si/SiO2, quartz, and glass substrates by thermal evaporation method. Our results show that 300 °C is the optimum substrate temperature to obtain thec-axis (001) oriented Bi...

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Veröffentlicht in:	Nanotechnology 2024-02, Vol.35 (19)
Hauptverfasser:	Malasi, Megha, Rathod, Shivam, Lakhani, Archana, Kumar, Devendra
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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