Deposition of TiN films on various substrates from alkoxide solution by plasma-enhanced CVD

TiN films were deposited at low temperatures of 300–600 °C on various substrates (Si wafer, silica glass, stainless steel) by injecting titanium tetra-ethoxide (TTEO) solution at a rate of 0.05–0.3 ml min −1 into a N 2 plasma. Parameters affecting the formation of TiN films such as the nature of the substrate, substrate temperature, feed rate of TTEO, and N 2 flow rate were examined. The films were characterized by XRD and scanning electron microscopy and the N and Ti contents determined, together with the O and C impurity contents, by X-ray photoelectron microscopy. The films deposited on Si wafers and silica glass at > 500 °C possessed a columnar structure of well-crystallized particles, whereas those on SUS contained coagulated particles with a greater content of C and O impurities.