Dependence of Cu∕Ta–N∕Ta Metallization Stability on the Characteristics of Low Dielectric Constant Materials

In this work, stability of the Cu/Ta-N/Ta/low-k material multilayers deposited on Si substrate was explored. The as-deposited Ta-N diffusion barriers are amorphous TaNx (x ~ 0.5) or polycrystalline TaN, whereas low-k materials include fluorinated silicate glass (FSG) and organosilicate glass (OSG)....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of the Electrochemical Society 2005-01, Vol.152 (7), p.G517-G521
Hauptverfasser:	Chang, Ching-Chun, JangJian, Shiu-Ko, Chen, J S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!