Post-annealing of Al-doped ZnO films in hydrogen atmosphere
Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for...
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| Veröffentlicht in: | Journal of crystal growth 2005-08, Vol.281 (2), p.475-480 |
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| container_issue | 2 |
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| container_title | Journal of crystal growth |
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| creator | Oh, Byeong-Yun Jeong, Min-Chang Kim, Doo-Soo Lee, Woong Myoung, Jae-Min |
| description | Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573
K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120
min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10
−3 to 8.30×10
−4
Ω
cm and carrier concentration increased from 2.11×10
20 to 8.86×10
20
cm
−3 when annealing time was 60
min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein–Moss effect, are consistent with the observed changes in electrical properties. |
| doi_str_mv | 10.1016/j.jcrysgro.2005.04.045 |
| format | Article |
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K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120
min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10
−3 to 8.30×10
−4
Ω
cm and carrier concentration increased from 2.11×10
20 to 8.86×10
20
cm
−3 when annealing time was 60
min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein–Moss effect, are consistent with the observed changes in electrical properties.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2005.04.045</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Hydrogen passivation ; B1. Al-doped ZnO (ZnO:Al) ; B1. Transparent conductive oxide (TCO) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Physics</subject><ispartof>Journal of crystal growth, 2005-08, Vol.281 (2), p.475-480</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-259c8122e623795cc0ce8e7799541796525865dd9c312e4c078e6262e540f6ad3</citedby><cites>FETCH-LOGICAL-c439t-259c8122e623795cc0ce8e7799541796525865dd9c312e4c078e6262e540f6ad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2005.04.045$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16959406$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Oh, Byeong-Yun</creatorcontrib><creatorcontrib>Jeong, Min-Chang</creatorcontrib><creatorcontrib>Kim, Doo-Soo</creatorcontrib><creatorcontrib>Lee, Woong</creatorcontrib><creatorcontrib>Myoung, Jae-Min</creatorcontrib><title>Post-annealing of Al-doped ZnO films in hydrogen atmosphere</title><title>Journal of crystal growth</title><description>Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573
K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120
min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10
−3 to 8.30×10
−4
Ω
cm and carrier concentration increased from 2.11×10
20 to 8.86×10
20
cm
−3 when annealing time was 60
min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein–Moss effect, are consistent with the observed changes in electrical properties.</description><subject>A1. Hydrogen passivation</subject><subject>B1. Al-doped ZnO (ZnO:Al)</subject><subject>B1. Transparent conductive oxide (TCO)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LxDAQxYMouK5-BelFb62TtEkbvLgs_oOF9aAXLyGk092UblKTrrDf3i674lF4zFx-bx7zCLmmkFGg4q7NWhN2cRV8xgB4BsUofkImtCrzlAOwUzIZJ0uBFdU5uYixBRidFCbk_s3HIdXOoe6sWyW-SWZdWvse6-TTLZPGdpuYWJesd3XwK3SJHjY-9msMeEnOGt1FvDruKfl4enyfv6SL5fPrfLZITZHLIWVcmooyhoLlpeTGgMEKy1JKXtBSCs54JXhdS5NThoWBshpRwZAX0Ahd51Nye7jbB_-1xTiojY0Gu0479NuomKSVkDkfQXEATfAxBmxUH-xGh52ioPZdqVb9dqX2XSkoRu2NN8cEHY3umqCdsfHPLSSXBYiRezhwOL77bTGoaCw6g7UNaAZVe_tf1A9MZIFU</recordid><startdate>20050801</startdate><enddate>20050801</enddate><creator>Oh, Byeong-Yun</creator><creator>Jeong, Min-Chang</creator><creator>Kim, Doo-Soo</creator><creator>Lee, Woong</creator><creator>Myoung, Jae-Min</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050801</creationdate><title>Post-annealing of Al-doped ZnO films in hydrogen atmosphere</title><author>Oh, Byeong-Yun ; Jeong, Min-Chang ; Kim, Doo-Soo ; Lee, Woong ; Myoung, Jae-Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-259c8122e623795cc0ce8e7799541796525865dd9c312e4c078e6262e540f6ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>A1. Hydrogen passivation</topic><topic>B1. Al-doped ZnO (ZnO:Al)</topic><topic>B1. Transparent conductive oxide (TCO)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oh, Byeong-Yun</creatorcontrib><creatorcontrib>Jeong, Min-Chang</creatorcontrib><creatorcontrib>Kim, Doo-Soo</creatorcontrib><creatorcontrib>Lee, Woong</creatorcontrib><creatorcontrib>Myoung, Jae-Min</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oh, Byeong-Yun</au><au>Jeong, Min-Chang</au><au>Kim, Doo-Soo</au><au>Lee, Woong</au><au>Myoung, Jae-Min</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Post-annealing of Al-doped ZnO films in hydrogen atmosphere</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-08-01</date><risdate>2005</risdate><volume>281</volume><issue>2</issue><spage>475</spage><epage>480</epage><pages>475-480</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573
K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120
min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10
−3 to 8.30×10
−4
Ω
cm and carrier concentration increased from 2.11×10
20 to 8.86×10
20
cm
−3 when annealing time was 60
min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein–Moss effect, are consistent with the observed changes in electrical properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2005.04.045</doi><tpages>6</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2005-08, Vol.281 (2), p.475-480 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A1. Hydrogen passivation B1. Al-doped ZnO (ZnO:Al) B1. Transparent conductive oxide (TCO) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics |
| title | Post-annealing of Al-doped ZnO films in hydrogen atmosphere |
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