Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of operating conditions on the flow pattern and growth rate uniformity in vertical high-speed rotating disk reactors. A number of three-dimensional computations have been made in terms of detailed physical–che...

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Veröffentlicht in:	Journal of crystal growth 2004-05, Vol.266 (1), p.354-362
Hauptverfasser:	Lobanova, A., Mazaev, K., Yakovlev, E., Talalaev, R., Galyukov, A., Makarov, Yu, Gotthold, D., Albert, B., Kadinski, L., Peres, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Computer simulation A1.Vertical rotating-disk reactor A3. Metalorganic vapor phase epitaxy B1. Nitrides Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
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