Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of operating conditions on the flow pattern and growth rate uniformity in vertical high-speed rotating disk reactors. A number of three-dimensional computations have been made in terms of detailed physical–che...

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Veröffentlicht in:	Journal of crystal growth 2004-05, Vol.266 (1), p.354-362
Hauptverfasser:	Lobanova, A., Mazaev, K., Yakovlev, E., Talalaev, R., Galyukov, A., Makarov, Yu, Gotthold, D., Albert, B., Kadinski, L., Peres, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Computer simulation A1.Vertical rotating-disk reactor A3. Metalorganic vapor phase epitaxy B1. Nitrides Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
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Beschreibung
Zusammenfassung:	A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of operating conditions on the flow pattern and growth rate uniformity in vertical high-speed rotating disk reactors. A number of three-dimensional computations have been made in terms of detailed physical–chemical MOVPE models. Mechanisms governing the flow patterns, as one of the factors affecting the growth efficiency, are considered. Special attention is given to parametric studies aimed at revealing the effect of operating conditions on the growth rate uniformity.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.02.066