Physico-chemical and X-ray optical characterizations of a Mo/Si multilayer interferential mirror upon annealing
We investigate on a Mo/Si multilayer interferential mirror (MIM) as a function of annealing at temperatures up to 600 °C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as...
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| Veröffentlicht in: | Surface science 2005-09, Vol.589 (1), p.164-172 |
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| container_title | Surface science |
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| creator | Jonnard, P. Jarrige, I. Benbalagh, R. Maury, H. André, J.-M. Dankházi, Z. Rolland, G. |
| description | We investigate on a Mo/Si multilayer interferential mirror (MIM) as a function of annealing at temperatures up to 600
°C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as-prepared system, whose thickness increases upon annealing. Measurements of the reflecting power at 1.33
nm show that both the reflectivity and the period markedly decrease as the annealing temperature increases, thus stressing on the interplay between the interface physico-chemical state and the optical properties. Our results shed light on the highest temperature regime, 600
°C, where the MIM loses its periodic structure as the majority of the silicon atoms are involved in the MoSi
2 compound. The diffusion coefficient is estimated from the evolution of the reflected intensity and the period. An activation energy of the diffusion process of 0.52
eV is deduced. |
| doi_str_mv | 10.1016/j.susc.2005.05.058 |
| format | Article |
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°C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as-prepared system, whose thickness increases upon annealing. Measurements of the reflecting power at 1.33
nm show that both the reflectivity and the period markedly decrease as the annealing temperature increases, thus stressing on the interplay between the interface physico-chemical state and the optical properties. Our results shed light on the highest temperature regime, 600
°C, where the MIM loses its periodic structure as the majority of the silicon atoms are involved in the MoSi
2 compound. The diffusion coefficient is estimated from the evolution of the reflected intensity and the period. An activation energy of the diffusion process of 0.52
eV is deduced.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2005.05.058</identifier><identifier>CODEN: SUSCAS</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diffusion ; Electronic structure ; Exact sciences and technology ; Interface ; Molybdenum ; Physics ; Silicide ; Silicon ; X-ray emission spectroscopy ; X-ray reflectivity</subject><ispartof>Surface science, 2005-09, Vol.589 (1), p.164-172</ispartof><rights>2005 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-3a31e67d7cd4de34e7bcd41d5422c57f917414dd7876c587000a1827054613963</citedby><cites>FETCH-LOGICAL-c361t-3a31e67d7cd4de34e7bcd41d5422c57f917414dd7876c587000a1827054613963</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.susc.2005.05.058$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17000090$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jonnard, P.</creatorcontrib><creatorcontrib>Jarrige, I.</creatorcontrib><creatorcontrib>Benbalagh, R.</creatorcontrib><creatorcontrib>Maury, H.</creatorcontrib><creatorcontrib>André, J.-M.</creatorcontrib><creatorcontrib>Dankházi, Z.</creatorcontrib><creatorcontrib>Rolland, G.</creatorcontrib><title>Physico-chemical and X-ray optical characterizations of a Mo/Si multilayer interferential mirror upon annealing</title><title>Surface science</title><description>We investigate on a Mo/Si multilayer interferential mirror (MIM) as a function of annealing at temperatures up to 600
°C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as-prepared system, whose thickness increases upon annealing. Measurements of the reflecting power at 1.33
nm show that both the reflectivity and the period markedly decrease as the annealing temperature increases, thus stressing on the interplay between the interface physico-chemical state and the optical properties. Our results shed light on the highest temperature regime, 600
°C, where the MIM loses its periodic structure as the majority of the silicon atoms are involved in the MoSi
2 compound. The diffusion coefficient is estimated from the evolution of the reflected intensity and the period. An activation energy of the diffusion process of 0.52
eV is deduced.</description><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffusion</subject><subject>Electronic structure</subject><subject>Exact sciences and technology</subject><subject>Interface</subject><subject>Molybdenum</subject><subject>Physics</subject><subject>Silicide</subject><subject>Silicon</subject><subject>X-ray emission spectroscopy</subject><subject>X-ray reflectivity</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kFtLAzEQhYMoWC9_wKe86Nu2yd6yC75I8QaKggq-hZjM2im7SU12hfrrzbYF3wwDCcM5X2YOIWecTTnj5Ww5DUPQ05SxYrqpao9MeCXqJBVFtU8mjGV1UrK0OiRHISxZPHldTIh7XqwDapfoBXSoVUuVNfQ98WpN3arfdPRCeaV78PijenQ2UNdQRR_d7AVpN7Q9tmoNnqKNmgY82B6jrUPvnafDytkItaBatJ8n5KBRbYDT3X1M3m6uX-d3ycPT7f386iHRWcn7JFMZh1IYoU1uIMtBfMQXN0WeproQTc1FznNjRCVKXVQirqN4lQpW5CXP6jI7Jhdb7sq7rwFCLzsMGtpWWXBDkGkkRAaLwnQr1N6F4KGRK4-d8mvJmRyzlUs5ZivHbOWmqmg639FViAk1XlmN4c85zsPqEX651UFc9RvBy6ARrAaDHnQvjcP_vvkF1ESQnQ</recordid><startdate>20050901</startdate><enddate>20050901</enddate><creator>Jonnard, P.</creator><creator>Jarrige, I.</creator><creator>Benbalagh, R.</creator><creator>Maury, H.</creator><creator>André, J.-M.</creator><creator>Dankházi, Z.</creator><creator>Rolland, G.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050901</creationdate><title>Physico-chemical and X-ray optical characterizations of a Mo/Si multilayer interferential mirror upon annealing</title><author>Jonnard, P. ; Jarrige, I. ; Benbalagh, R. ; Maury, H. ; André, J.-M. ; Dankházi, Z. ; Rolland, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-3a31e67d7cd4de34e7bcd41d5422c57f917414dd7876c587000a1827054613963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffusion</topic><topic>Electronic structure</topic><topic>Exact sciences and technology</topic><topic>Interface</topic><topic>Molybdenum</topic><topic>Physics</topic><topic>Silicide</topic><topic>Silicon</topic><topic>X-ray emission spectroscopy</topic><topic>X-ray reflectivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jonnard, P.</creatorcontrib><creatorcontrib>Jarrige, I.</creatorcontrib><creatorcontrib>Benbalagh, R.</creatorcontrib><creatorcontrib>Maury, H.</creatorcontrib><creatorcontrib>André, J.-M.</creatorcontrib><creatorcontrib>Dankházi, Z.</creatorcontrib><creatorcontrib>Rolland, G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jonnard, P.</au><au>Jarrige, I.</au><au>Benbalagh, R.</au><au>Maury, H.</au><au>André, J.-M.</au><au>Dankházi, Z.</au><au>Rolland, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physico-chemical and X-ray optical characterizations of a Mo/Si multilayer interferential mirror upon annealing</atitle><jtitle>Surface science</jtitle><date>2005-09-01</date><risdate>2005</risdate><volume>589</volume><issue>1</issue><spage>164</spage><epage>172</epage><pages>164-172</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>We investigate on a Mo/Si multilayer interferential mirror (MIM) as a function of annealing at temperatures up to 600
°C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as-prepared system, whose thickness increases upon annealing. Measurements of the reflecting power at 1.33
nm show that both the reflectivity and the period markedly decrease as the annealing temperature increases, thus stressing on the interplay between the interface physico-chemical state and the optical properties. Our results shed light on the highest temperature regime, 600
°C, where the MIM loses its periodic structure as the majority of the silicon atoms are involved in the MoSi
2 compound. The diffusion coefficient is estimated from the evolution of the reflected intensity and the period. An activation energy of the diffusion process of 0.52
eV is deduced.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2005.05.058</doi><tpages>9</tpages></addata></record> |
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| ispartof | Surface science, 2005-09, Vol.589 (1), p.164-172 |
| issn | 0039-6028 1879-2758 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion Electronic structure Exact sciences and technology Interface Molybdenum Physics Silicide Silicon X-ray emission spectroscopy X-ray reflectivity |
| title | Physico-chemical and X-ray optical characterizations of a Mo/Si multilayer interferential mirror upon annealing |
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