Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-...

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Veröffentlicht in:	Materials Science Forum 2005-05, Vol.483-485, p.97-100
Hauptverfasser:	Ishii, R., Sugawara, Yoshitaka, Kamata, Isaho, Asano, Katsunori, Nakayama, Koji, Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Izumi, Kunikaza, Nakamura, Tomonori
Format:	Artikel
Sprache:	eng
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