Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-...
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| Veröffentlicht in: | Materials Science Forum 2005-05, Vol.483-485, p.97-100 |
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| creator | Asano, Katsunori Nakayama, Koji Miyanagi, Toshiyuki Ishii, R. Tsuchida, Hidekazu Kamata, Isaho Sugawara, Yoshitaka Izumi, Kunikaza Nakamura, Tomonori |
| description | In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward
degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.483-485.97 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29167021</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29167021</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-699148866d88281f0d218cad4aed011961af31a5b6f7d01cbcb8963727bc3f283</originalsourceid><addsrcrecordid>eNqVkMtKAzEUhoMXsFbfISvBxUyTTCaXpVZthYpCdSeETJqxkTFTk9Qi4rsbreDaxeHAufzwfQCcYlRSRMRos9mU0Tjrk2udKb1No5v5VUlFVVBRl5LvgAFmjBSS12QXHEsukOCCSskqsgcGiNR1UVPODsBhjM8IVVhgNgCP1_7NxuSedHK9h30Lz3XUHbzrtLfwwsWuNz-rCJ2HaWkhnRZzN4aXK9fpdxsinIR-kz89_EAI4U84XzcxBZ1sPAL7re6iPf7tQ_BwdXk_nhaz28n1-GxWmIrRVDApMRWCsYUQROAWLQgWRi-otguEsWRYtxXWdcNangemMY3IWJzwxlQtEdUQnGxzV6F_XWcc9eKisd03Q7-OikjMOCI4H55tD03oYwy2VavgXnR4Vxipb88qe1Z_nlX2rLJnlT3nqpXkOWO8zciMPiZrluq5XwefAf-R8gVyQ42h</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29167021</pqid></control><display><type>article</type><title>Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates</title><source>Scientific.net Journals</source><creator>Asano, Katsunori ; Nakayama, Koji ; Miyanagi, Toshiyuki ; Ishii, R. ; Tsuchida, Hidekazu ; Kamata, Isaho ; Sugawara, Yoshitaka ; Izumi, Kunikaza ; Nakamura, Tomonori</creator><creatorcontrib>Asano, Katsunori ; Nakayama, Koji ; Miyanagi, Toshiyuki ; Ishii, R. ; Tsuchida, Hidekazu ; Kamata, Isaho ; Sugawara, Yoshitaka ; Izumi, Kunikaza ; Nakamura, Tomonori</creatorcontrib><description>In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward
degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>ISBN: 9780878499632</identifier><identifier>ISBN: 0878499636</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.483-485.97</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials Science Forum, 2005-05, Vol.483-485, p.97-100</ispartof><rights>2005 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-699148866d88281f0d218cad4aed011961af31a5b6f7d01cbcb8963727bc3f283</citedby><cites>FETCH-LOGICAL-c364t-699148866d88281f0d218cad4aed011961af31a5b6f7d01cbcb8963727bc3f283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/513?width=600</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Asano, Katsunori</creatorcontrib><creatorcontrib>Nakayama, Koji</creatorcontrib><creatorcontrib>Miyanagi, Toshiyuki</creatorcontrib><creatorcontrib>Ishii, R.</creatorcontrib><creatorcontrib>Tsuchida, Hidekazu</creatorcontrib><creatorcontrib>Kamata, Isaho</creatorcontrib><creatorcontrib>Sugawara, Yoshitaka</creatorcontrib><creatorcontrib>Izumi, Kunikaza</creatorcontrib><creatorcontrib>Nakamura, Tomonori</creatorcontrib><title>Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates</title><title>Materials Science Forum</title><description>In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward
degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><isbn>9780878499632</isbn><isbn>0878499636</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqVkMtKAzEUhoMXsFbfISvBxUyTTCaXpVZthYpCdSeETJqxkTFTk9Qi4rsbreDaxeHAufzwfQCcYlRSRMRos9mU0Tjrk2udKb1No5v5VUlFVVBRl5LvgAFmjBSS12QXHEsukOCCSskqsgcGiNR1UVPODsBhjM8IVVhgNgCP1_7NxuSedHK9h30Lz3XUHbzrtLfwwsWuNz-rCJ2HaWkhnRZzN4aXK9fpdxsinIR-kz89_EAI4U84XzcxBZ1sPAL7re6iPf7tQ_BwdXk_nhaz28n1-GxWmIrRVDApMRWCsYUQROAWLQgWRi-otguEsWRYtxXWdcNangemMY3IWJzwxlQtEdUQnGxzV6F_XWcc9eKisd03Q7-OikjMOCI4H55tD03oYwy2VavgXnR4Vxipb88qe1Z_nlX2rLJnlT3nqpXkOWO8zciMPiZrluq5XwefAf-R8gVyQ42h</recordid><startdate>20050515</startdate><enddate>20050515</enddate><creator>Asano, Katsunori</creator><creator>Nakayama, Koji</creator><creator>Miyanagi, Toshiyuki</creator><creator>Ishii, R.</creator><creator>Tsuchida, Hidekazu</creator><creator>Kamata, Isaho</creator><creator>Sugawara, Yoshitaka</creator><creator>Izumi, Kunikaza</creator><creator>Nakamura, Tomonori</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20050515</creationdate><title>Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates</title><author>Asano, Katsunori ; Nakayama, Koji ; Miyanagi, Toshiyuki ; Ishii, R. ; Tsuchida, Hidekazu ; Kamata, Isaho ; Sugawara, Yoshitaka ; Izumi, Kunikaza ; Nakamura, Tomonori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-699148866d88281f0d218cad4aed011961af31a5b6f7d01cbcb8963727bc3f283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asano, Katsunori</creatorcontrib><creatorcontrib>Nakayama, Koji</creatorcontrib><creatorcontrib>Miyanagi, Toshiyuki</creatorcontrib><creatorcontrib>Ishii, R.</creatorcontrib><creatorcontrib>Tsuchida, Hidekazu</creatorcontrib><creatorcontrib>Kamata, Isaho</creatorcontrib><creatorcontrib>Sugawara, Yoshitaka</creatorcontrib><creatorcontrib>Izumi, Kunikaza</creatorcontrib><creatorcontrib>Nakamura, Tomonori</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials Science Forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asano, Katsunori</au><au>Nakayama, Koji</au><au>Miyanagi, Toshiyuki</au><au>Ishii, R.</au><au>Tsuchida, Hidekazu</au><au>Kamata, Isaho</au><au>Sugawara, Yoshitaka</au><au>Izumi, Kunikaza</au><au>Nakamura, Tomonori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates</atitle><jtitle>Materials Science Forum</jtitle><date>2005-05-15</date><risdate>2005</risdate><volume>483-485</volume><spage>97</spage><epage>100</epage><pages>97-100</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><isbn>9780878499632</isbn><isbn>0878499636</isbn><abstract>In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward
degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.483-485.97</doi><tpages>4</tpages></addata></record> |
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| title | Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates |
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