Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Controllable polytype transformation from 6H-SiC seeding substrates to pure 4H-SiC by means of PVT bulk growth has been demonstrated. The furnace design and growth procedures are discussed. The thermodynamic parameters such as supersaturation and vapor stoichiometry for preferential 4H-SiC growth we...

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Veröffentlicht in:	Journal of crystal growth 2007-02, Vol.299 (1), p.70-76
Hauptverfasser:	Tupitsyn, E.Y., Arulchakkaravarthi, A., Drachev, R.V., Sudarshan, T.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Computer simulation A1. Polytype transformation A1. Stoichiometry A1. Supersaturation A3. Physical vapor deposition B2. 4H-SIC Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Equations of state, phase equilibria, and phase transitions Exact sciences and technology General studies of phase transitions Materials science Methods of deposition of films and coatings film growth and epitaxy Nucleation Physics
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