A Comparative Study of a Dielectric‐Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric‐defined process. This process was utilized to fabricate 0.12 μm × 100 µm T‐gate PHEMTs. A two‐step etch process was performed to define the gate footprint in the SiNx. The...

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Veröffentlicht in:	ETRI journal 2005-06, Vol.27 (3), p.304-311
Hauptverfasser:	Lim, Jong‐Won, Ahn, Ho‐Kyun, Ji, Hong‐Gu, Chang, Woo‐Jin, Mun, Jae‐Kyoung, Kim, Haecheon, Cho, Kyoung‐Ik
Format:	Artikel
Sprache:	eng
Schlagworte:	cut‐off frequency GaAs gate maximum oscillation frequency PHEMT recess
Online-Zugang:	Volltext
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