Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films
Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1 μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and...
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| Veröffentlicht in: | Journal of crystal growth 2005-08, Vol.281 (2), p.297-302 |
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| container_title | Journal of crystal growth |
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| creator | Keyes, B.M. Gedvilas, L.M. Li, X. Coutts, T.J. |
| description | Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1
μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800
cm
−1 and a band at 3020
cm
−1 attributable to a N–H bond. These atomic configurations, in addition to the observed O–H bands around 3400
cm
−1, provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen. |
| doi_str_mv | 10.1016/j.jcrysgro.2005.04.053 |
| format | Article |
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μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800
cm
−1 and a band at 3020
cm
−1 attributable to a N–H bond. These atomic configurations, in addition to the observed O–H bands around 3400
cm
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μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800
cm
−1 and a band at 3020
cm
−1 attributable to a N–H bond. These atomic configurations, in addition to the observed O–H bands around 3400
cm
−1, provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen.</description><subject>A1. Characterization</subject><subject>A1. FTIR-spectroscopy</subject><subject>A1. Impurities</subject><subject>A3. Metalorganic chemical vapor deposition</subject><subject>B1. Oxides</subject><subject>B1. Zinc compounds</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxDAQx4MouK5-BelFb62TpOnDk4v4WFjci168hDRJNUs3qUlX6Lc3ZVc8epmB4f9gfghdYsgw4OJmk22kH8OHdxkBYBnkGTB6hGa4KmnKAMgxmsVJUiB5dYrOQtgARCeGGVosbeuF1yoJvZaDd0G6fkxcm_SuG6fcQXSdsTp5t-tEWDXt25dk-DQ2aU23DefopBVd0BeHPUdvjw-v98_pav20vF-sUpnTekh1VciG0hyoIrTC8ahK0oKsSiyZaEiJC6pzpkAKlpdY1w1VQpbAyprWkDd0jq73ub13XzsdBr41QequE1a7XeCkxqwCUkVhsRfK-E3wuuW9N1vhR46BT8T4hv8S4xMxDjmPxKLx6tAgghRd5GKlCX_uomY1rSDq7vY6Hd_9NtrzII22UivjI0OunPmv6gcN4IR0</recordid><startdate>20050801</startdate><enddate>20050801</enddate><creator>Keyes, B.M.</creator><creator>Gedvilas, L.M.</creator><creator>Li, X.</creator><creator>Coutts, T.J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050801</creationdate><title>Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films</title><author>Keyes, B.M. ; Gedvilas, L.M. ; Li, X. ; Coutts, T.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-e86cb33403d2381c43d72f0c871c5ab27163e45d0ca5471e9b3dac705793904b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>A1. Characterization</topic><topic>A1. FTIR-spectroscopy</topic><topic>A1. Impurities</topic><topic>A3. Metalorganic chemical vapor deposition</topic><topic>B1. Oxides</topic><topic>B1. Zinc compounds</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Keyes, B.M.</creatorcontrib><creatorcontrib>Gedvilas, L.M.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Coutts, T.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Keyes, B.M.</au><au>Gedvilas, L.M.</au><au>Li, X.</au><au>Coutts, T.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-08-01</date><risdate>2005</risdate><volume>281</volume><issue>2</issue><spage>297</spage><epage>302</epage><pages>297-302</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1
μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800
cm
−1 and a band at 3020
cm
−1 attributable to a N–H bond. These atomic configurations, in addition to the observed O–H bands around 3400
cm
−1, provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2005.04.053</doi><tpages>6</tpages></addata></record> |
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| subjects | A1. Characterization A1. FTIR-spectroscopy A1. Impurities A3. Metalorganic chemical vapor deposition B1. Oxides B1. Zinc compounds Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics |
| title | Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films |
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