A compact analytical I– V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

A simple non-linear charge control model proposed by DasGupta et al. for the AlGaAs/GaAs based high electron mobility transistors (HEMTs) is applied for AlGaAs/InGaAs/GaAs based pseudomorphic HEMTs. This non-linear charge control model is used to calculate the I– V characteristics of pHEMTs. As elec...

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Veröffentlicht in:	Microelectronic engineering 2004-08, Vol.75 (2), p.127-136
Hauptverfasser:	Remashan, K, Radhakrishnan, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Device modeling Electronics Exact sciences and technology High electron mobility transistors Integrated circuits I– V characteristics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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