Compositional contrast in AlxGa1-xN/GaN heterostructures using scanning spreading resistance microscopy

Scanning spreading resistance microscopy has found extensive use as a dopant-profiling technique for silicon-based devices, and to a lesser extent for some III-V materials. Here we demonstrate its efficacy for wide bandgap nitrides and, in particular, show that it may be used to differentiate betwee...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2007-02, Vol.253 (8), p.3937-3944
Hauptverfasser:	FRASER, I. S, OLIVER, R. A, SUMNER, J, MCALEESE, C, KAPPERS, M. J, HUMPHREYS, C. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!