Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant p...

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Veröffentlicht in:	Materials Science Forum 2005-05, Vol.483-485, p.277-280
Hauptverfasser:	Cantin, J.L., von Bardeleben, Hans Jürgen, Feldman, Leonard C., Song, Yong Wei, Williams, John R., Dhar, S., Shishkin, Y., Vickridge, I., Devaty, Robert P., Choyke, Wolfgang J., Ke, L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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